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MW7IC2020Nt1 1 rf device data freescale semiconductor, inc. rf ldmos wideband integrated power amplifier the MW7IC2020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 2170 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. driver application ? 2100 mhz ? typical single--carrier w--cdma performance: v dd =28volts,i dq1 = 40 ma, i dq2 = 230 ma, p out = 2.4 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) output par (db) acpr (dbc) 2110 mhz 32.6 16.8 7.7 --51.3 2140 mhz 32.6 17.0 7.6 --51.4 2170 mhz 32.4 17.0 7.5 --51.6 ? capable of handling 10:1 vswr, @ 32 vdc, 2140 mhz, p out = 33 watts cw (3 db input overdrive from rated p out ) ? typical p out @ 1 db compression point ? 20 watts cw driver application ? 1800 mhz ? typical single--carrier w--cdma performance: v dd =28volts, i dq1 =40ma,i dq2 = 230 ma, p out = 2.4 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) output par (db) acpr (dbc) 1805 mhz 31.8 17.4 7.6 --51.2 1840 mhz 31.8 17.4 7.7 --50.2 1880 mhz 31.8 17.4 7.7 --51.0 features ? characterized with series equivalent large--signal impedance parameters and commo n source s--parameters ? on--chip matching (50 ohm input, dc blocked) ? integrated quiescent current temperatur e compensation with enable/disable function (1) ? integrated esd protection ? in tape and reel. t1 suffix = 1000 units, 16 mm tape width, 13 inch reel. figure 1. functional block diagram figure 2. pin connections v gs2 v gs1 1 rf in quiescent current temperature compensation (1) rf in rf out /v ds2 v ds1 2 3 4 5 6 7 8 9 10 11 12 18 17 16 15 14 13 24 23 22 21 20 19 gnd gnd nc v ds1 v ds1 v gs1 v gs2 rf in nc nc nc nc nc nc nc rf out /v ds2 rf out /v ds2 nc nc nc nc nc nc 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf . select documentation/application notes -- an1977 or an1987. 1805--2170 mhz, 2.4 w avg., 28 v single w--cdma rf ldmos wideband integrated power amplifier MW7IC2020Nt1 case 1894--01 pqfn 8x8 plastic document number: MW7IC2020N rev. 0, 1/2012 freescale semiconductor technical data ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MW7IC2020Nt1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c operating junction temperature (1,2) t j 150 c input power p in 37 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 84 c, 2.4 w cw stage 1, 28 vdc, i dq1 = 40 ma, 2140 mhz stage 2, 28 vdc, i dq2 = 230 ma, 2140 mhz case temperature 92 c, 24 w cw stage 1, 28 vdc, i dq1 = 40 ma, 2140 mhz stage 2, 28 vdc, i dq2 = 230 ma, 2140 mhz r jc 9.0 1.9 8.6 1.6 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iii table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 ? on characteristics gate threshold voltage (v ds =10vdc,i d =12 adc) v gs(th) 1.0 2.0 3.0 vdc gate quiescent voltage (v ds =28vdc,i dq1 =40madc) v gs(q) ? 2.9 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1 = 40 madc, measured in functional test) v gg(q) 6.2 6.9 7.7 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
MW7IC2020Nt1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 ? off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 ? on characteristics gate threshold voltage (v ds =10vdc,i d =75 adc) v gs(th) 1.0 2.0 3.0 vdc gate quiescent voltage (v ds =28vdc,i dq2 = 230 madc) v gs(q) ? 2.8 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq2 = 230 madc, measured in functional test) v gg(q) 4.7 5.5 6.2 vdc drain--source on--voltage (v gs =10vdc,i d =0.75adc) v ds(on) 0.1 0.3 0.8 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 =40ma,i dq2 = 230 ma, p out = 2.4 w avg., f = 2140 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 31.0 32.6 36.0 db power added efficiency pae 16.0 17.0 ? % adjacent channel power ratio acpr ? --51.4 --47.0 dbc input return loss irl ? -- 1 2 -- 1 0 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 =40ma,i dq2 = 230 ma, p out =2.4w avg., single--carrier w--cdma, iq m agnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) pae (%) output par (db) acpr (dbc) irl (db) 2110 mhz 32.6 16.8 7.7 --51.3 -- 1 4 2140 mhz 32.6 17.0 7.6 --51.4 -- 1 2 2170 mhz 32.4 17.0 7.5 --51.6 -- 1 1 typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 =40ma,i dq2 = 230 ma, 2110--2170 mhz bandwidth characteristic symbol min typ max unit p out @ 1 db compression point, cw p1db ? 20 ? w imd symmetry @ 9 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 25 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz quiescent current accuracy over temperature (2) stage 1 with2k ? gate feed resistors (--30 to 85 c) stage 2 ? i qt ? ? 0.00 3.70 ? ? % gain flatness in 60 mhz bandwidth @ p out =2.4wavg. g f ? 0.2 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.045 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.004 ? db/ c 1. part internally input matched. 2. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf . select documentation/application notes -- an1977 or an1987. (continued)
4 rf device data freescale semiconductor, inc. MW7IC2020Nt1 table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) typical performance ? 1800 mhz (in freescale 1800 mhz test fixture, 50 ohm system) v dd =28vdc,i dq1 =40ma,i dq2 = 230 ma, p out = 2.4 w avg., single--carrier w--cdma, iq magnitude cli pping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) pae (%) output par (db) acpr (dbc) irl (db) 1805 mhz 31.8 17.4 7.6 --51.2 -- 1 3 1840 mhz 31.8 17.4 7.7 --50.2 -- 9 1880 mhz 31.8 17.4 7.7 --51.0 -- 6
MW7IC2020Nt1 5 rf device data freescale semiconductor, inc. figure 3. MW7IC2020Nt1 test circuit component layout MW7IC2020N rev. 0 v gg1 r1 v gg2 r2 c1 c2 v dd1 c4 c5 c6 c15 c14 c13 v dd2 c9 c8 c7 c3 c12 c11 c10 v dd2 table 6. MW7IC2020Nt1 test circuit c omponent designations and values part description part number manufacturer c1 1.2 pf, chip capacitor atc600f1r2bt250xt atc c2, c3, c11, c14 4.7 f, 50 v chip capacitors grm31cr71h475ka12l murata c4, c9, c10, c13 33 pf chip capacitors atc600f330jt250xt atc c5 1.0 f, 100 v chip capacitor grm31cr72a105ka01l murata c6, c12, c15 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c7 0.5 pf chip capacitor atc100b0r5bt500xt atc c8 0.6 pf chip capacitor atc600f0r6bt250xt atc r1, r2 4.7 k ? , 1/4 w chip resistors crcw12064k70fkea vishay pcb 0.020 , r =3.5 ro4350 rogers
6 rf device data freescale semiconductor, inc. MW7IC2020Nt1 typical characteristics irl, input return loss (db) 2060 irl g ps acpr f, frequency (mhz) figure 4. output peak--to--average ratio compression (parc) broadband performance @ p out = 2.4 watts avg. -- 1 6 -- 8 -- 1 0 -- 1 2 -- 1 4 32 33 32.9 32.8 -- 5 2 18 17 16 15 -- 4 7 -- 4 8 -- 4 9 -- 5 0 pae, power added efficiency (%) g ps , power gain (db) 32.7 32.6 32.5 32.4 32.3 32.2 2080 2100 2120 2140 2160 2180 2200 2220 14 -- 5 1 -- 1 8 parc parc (db) 0 0.4 0.3 0.2 0.1 -- 0 . 1 acpr (dbc) single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf 32.1 v dd =28vdc,p out =2.4w(avg.),i dq1 =40ma i dq2 = 230 ma pae figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 9 w (pep) i dq1 =40ma,i dq2 = 230 ma -- 6 0 two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz figure 6. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 5 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 0101525 8 50 43 36 29 22 15 pae, power added efficiency (%) --1db=5.7w 20 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf acpr parc acpr (dbc) -- 7 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 -- 4 0 -- 6 0 34 g ps , power gain (db) 32 30 28 26 24 22 g ps pae v dd =28vdc,i dq1 =40ma i dq2 = 230 ma, f = 2140 mhz single--carrier w--cdma --2db=7.8w --3db=10.4w
MW7IC2020Nt1 7 rf device data freescale semiconductor, inc. typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 7. single--carrier w--cdma power gain, power added efficiency and acpr versus output power -- 1 0 -- 2 0 23 35 0 60 50 40 30 20 pae, power added efficiency (%) g ps , power gain (db) 33 31 10 40 10 -- 6 0 acpr (dbc) 29 27 25 0 -- 3 0 -- 4 0 -- 5 0 figure 8. broadband frequency response 0 36 1350 f, frequency (mhz) v dd =28vdc p in =0dbm i dq1 =40ma i dq2 = 230 ma 24 18 12 1550 gain (db) 30 gain 1750 1950 2150 2350 2550 2750 2950 irl -- 1 8 0 -- 3 -- 6 -- 9 -- 1 2 irl (db) 6--15 pae 2170 mhz 2110 mhz 2140 mhz input signal par = 7.5 db @ 0.01% probab ility on ccdf v dd =28vdc,i dq1 =40ma,i dq2 = 230 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth 2110 mhz 2140 mhz 2170 mhz w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 9. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 10. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
8 rf device data freescale semiconductor, inc. MW7IC2020Nt1 v dd =28vdc,i dq1 =40ma,i dq2 = 230 ma, p out =2.4wavg. f mhz z in ? z load ? 2060 53.3 -- j50.4 7.28 -- j4.02 2080 50.9 -- j50.9 7.28 -- j3.92 2100 47.8 -- j51.0 7.28 -- j3.82 2120 45.0 -- j51.3 7.30 -- j3.74 2140 41.7 -- j51.0 7.32 -- j3.68 2160 39.4 -- j49.6 7.33 -- j3.61 2180 37.4 -- j48.5 7.35 -- j3.54 2200 36.1 -- j47.2 7.38 -- j3.49 2220 34.9 -- j45.9 7.42 -- j3.46 z in = device input impedance as simulated from gate to ground. z load = test circuit impedance as simulated from drain to ground. figure 11. series equivalent input and load impedance device under test output matching network z in z load
MW7IC2020Nt1 9 rf device data freescale semiconductor, inc. v dd =28vdc,i dq1 =30ma,i dq2 = 195 ma, cw f (mhz) z in ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) pae (%) (dbm) (w) pae (%) 2110 42.0 -- j42.0 8.0 -- j10.1 45.5 36 51.3 46.0 40 50.9 2140 42.6 -- j42.0 7.8 -- j10.4 45.5 36 50.7 46.0 39 50.4 2170 39.0 -- j45.0 7.5 -- j10.5 45.3 34 50.3 45.8 38 50.2 (1) load impedance for optimum p1db power. z in = impedance as measured from input contact to ground. z load = impedance as measured from drain contact to ground. figure 12. load pull performance ? maximum p1db tuning device under test output load pull tuner z in z load v dd =28vdc,i dq1 =30ma,i dq2 = 195 ma, cw f (mhz) z in ( ? ) z load (1) ( ? ) max power added efficiency p1db p3db (dbm) (w) pae (%) (dbm) (w) pae (%) 2110 43.0--j48.0 8.1--j4.5 44.3 27 57.2 44.8 30 55.4 2140 42.0--j48.0 7.6--j5.3 44.4 28 56.6 44.8 30 54.8 2170 36.5--j50.0 7.1--j5.8 44.3 27 56.0 44.7 30 54.5 (1) load impedance for optimum p1db efficiency. z in = impedance as measured from input contact to ground. z load = impedance as measured from drain contact to ground. figure 13. load pull performance ? maximum power added efficiency tuning device under test output load pull tuner z in z load
10 rf device data freescale semiconductor, inc. MW7IC2020Nt1 figure 14. MW7IC2020Nt1 test circ uit component layout ? 1800 mhz MW7IC2020N rev. 0 v gg1 v gg2 v dd1 v dd2 v dd2 r2 c1 r1 l1 c2 c3 c4 c5 c14 c13 c12 c9 c10 c11 c6 c7 c8 c15 c16 c17 table 7. MW7IC2020Nt1 test circuit com ponent designations and values ? 1800 mhz part description part number manufacturer c1, c6, c12, c15 33 pf capacitors atc600f330jt250xt atc c2 1.1 pf chip capacitor atc600f1r1bt250xt atc c3 1.6 pf chip capacitor atc600f1r6bt250xt atc c4, c5, c13, c16 4.7 f, 50 v chip capacitors grm31cr71h475ka12l murata c7 1.0 f, 100 v chip capacitor grm31cr72a105ka01l murata c8, c14, c17 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c9 0.3 pf chip capacitor atc100b0r3bt500xt atc c10 0.5 pf chip capacitor atc600f0r5bt250xt atc c11 10 pf capacitors atc600f100jt250xt atc l1 12 nh chip inductor l0805120jestr avx r1, r2 4.7 k ? , 1/4 w chip resistors crcw12064k70fkea vishay pcb 0.020 , r =3.5 ro4350 rogers
MW7IC2020Nt1 11 rf device data freescale semiconductor, inc. typical characteristics ? 1800 mhz irl, input return loss (db) 1760 irl g ps acpr f, frequency (mhz) figure 15. output peak--to--average ratio compression (parc) broadband performance @ p out = 2.4 watts avg. -- 1 7 -- 5 -- 8 -- 11 -- 1 4 31.3 32.3 32.2 32.1 -- 5 3 19 18 17 16 -- 4 8 -- 4 9 -- 5 0 -- 5 1 pae, power added efficiency (%) g ps , power gain (db) 32 31.9 31.8 31.7 31.6 31.5 1780 1800 1820 1840 1860 1880 1900 1920 15 -- 5 2 -- 2 0 parc parc (db) -- 0 . 1 0.3 0.2 0.1 0 -- 0 . 2 acpr (dbc) single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf 31.4 v dd =28vdc,p out =2.4w(avg.) i dq1 =40ma,i dq2 = 230 ma pae 1 g ps acpr p out , output power (watts) avg. figure 16. single--carrier w--cdma power gain, power added efficiency and acpr versus output power -- 1 0 -- 2 0 22 34 0 60 50 40 30 20 pae, power added efficiency (%) g ps , power gain (db) 32 30 10 40 10 -- 6 0 acpr (dbc) 28 26 24 0 -- 3 0 -- 4 0 -- 5 0 pae 1880 mhz 1805 mhz 1840 mhz input signal par = 7.5 db @ 0.01% probab ility on ccdf v dd =28vdc,i dq1 =40ma,i dq2 = 230 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth figure 17. broadband frequency response 0 36 1400 f, frequency (mhz) v dd =28vdc p in =0dbm i dq1 =40ma i dq2 = 230 ma 24 18 12 1525 gain (db) 30 gain 1650 1775 1900 2025 2150 2275 2400 irl -- 2 4 0 -- 4 -- 8 -- 1 2 -- 1 6 irl (db) 6--20 1880 mhz 1840 mhz 1805 mhz
12 rf device data freescale semiconductor, inc. MW7IC2020Nt1 v dd =28vdc,i dq1 =40ma,i dq2 = 230 ma, p out =2.4wavg. f mhz z in ? z load ? 1760 46.6 + j14.0 14.4 -- j7.06 1780 54.0 + j15.2 14.0 -- j6.89 1800 62.4 + j14.5 13.6 -- j6.71 1820 70.8 + j11.4 13.2 -- j6.53 1840 78.8 + j5.70 12.9 -- j6.34 1860 85.2 -- j2.64 12.6 -- j6.14 1880 88.8 -- j12.5 12.4 -- j5.94 1900 89.2 -- j22.9 12.1 -- j5.74 1920 86.7 -- j32.6 11.9 -- j5.53 z in = device input impedance as simulated from gate to ground. z load = test circuit impedance as simulated from drain to ground. figure 18. series equivalent input and load impedance ? 1800 mhz device under test output matching network z in z load
MW7IC2020Nt1 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. MW7IC2020Nt1
MW7IC2020Nt1 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. MW7IC2020Nt1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 jan. 2012 ? initial release of data sheet
MW7IC2020Nt1 17 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MW7IC2020N rev. 0, 1/2012

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